MDE Semiconductor, Inc. TVS Diode Series RT100KP28A/CA -RT100KP400A/CA

Description
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.
Datasheet
Description
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
TVS Diode Series - RT100KP28A/CA -RT100KP400A/CA - MDE Semiconductor, Inc.
Newport Beach, CA, United States
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.

Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.

Supplier's Site Datasheet

Technical Specifications

  MDE Semiconductor, Inc.
Product Category Transient Voltage Suppressor Diodes (TVS)
Product Number RT100KP28A/CA -RT100KP400A/CA
Product Name TVS Diode Series
Configuration Single
Unlock Full Specs
to access all available technical data