MDE Semiconductor, Inc. TVS Diode Series ICTE8C – ICTE45C

Description
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.
Datasheet
Description
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.
Datasheet

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TVS Diode Series - ICTE8C – ICTE45C - MDE Semiconductor, Inc.
Newport Beach, CA, United States
TVS Diode Series
ICTE8C – ICTE45C
TVS Diode Series ICTE8C – ICTE45C
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.

Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.

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Technical Specifications

  MDE Semiconductor, Inc.
Product Category Transient Voltage Suppressor Diodes (TVS)
Product Number ICTE8C – ICTE45C
Product Name TVS Diode Series
Configuration Single
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