MaxLinear, Inc. Single FETs, MOSFETs XR46000ESETR

Description
MOSFET N-CH 600V 1.5A SOT223
Request a Quote Datasheet
Description
MOSFET N-CH 600V 1.5A SOT223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - XR46000ESETR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
XR46000ESETR
Single FETs, MOSFETs XR46000ESETR
MOSFET N-CH 600V 1.5A SOT223

MOSFET N-CH 600V 1.5A SOT223

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XR46000ESETR - 1045414-XR46000ESETR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XR46000ESETR
1045414-XR46000ESETR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XR46000ESETR 1045414-XR46000ESETR
Manufacturer: Exar Corporation Win Source Part Number: 1045414-XR46000ESETR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Exar Corporation
Win Source Part Number: 1045414-XR46000ESETR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.5nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 1016-2071-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1016-2071-2-ND
Single FETs, MOSFETs 1016-2071-2-ND
N-Channel 600V 1.5A (Tc) 20W (Tc) Surface Mount SOT-223-3

N-Channel 600V 1.5A (Tc) 20W (Tc) Surface Mount SOT-223-3

Buy Now Datasheet
MOSFET Transistor 278-XR46000ESETR
Power Field-Effect Transistor, Product overview: XR46000ESETR from MaxLinear is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-XR46000ESETR can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: XR46000ESETR from MaxLinear is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-XR46000ESETR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - XR46000ESETR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
XR46000ESETR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs XR46000ESETR
MOSFET N-CH 600V 1.5A SOT223

MOSFET N-CH 600V 1.5A SOT223

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V N-Channel Power MOSFET

MOSFET 600V N-Channel Power MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number XR46000ESETR 1045414-XR46000ESETR 1016-2071-2-ND 278-XR46000ESETR XR46000ESETR XR46000ESETR
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - XR46000ESETR Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 1500 milliamps
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6 suppliers