MAPR-000912-500S00 is a NPN silicon microwave power transistor designed for avionics pulsed power applications at 960-1215 MHz with a peak output power of 500 W, 10 µs pulse width, and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a maximum collector-emitter voltage of 80 V, peak collector current of 52.5 A, and junction temperature up to +200°C. Power gain ranges from 9.44 dB to 9.77 dB across the frequency band, with collector efficiency up to 56.1%. Thermal resistance is 0.08 °C/W. The part is RoHS compliant and rated for load mismatch tolerance up to 1.5:1 VSWR.
Alternative Parts (Cross-Reference): Cross
Manufacturer: MACOM Technology Solutions
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Package: Tray
Product Status: Active
Transistor Type: NPN
Gain: 9.44dB ~ 9.77dB
Power - Max: 500W
Current - Collector (Ic) (Max): 52.5A
Operating Temperature: 200°C (TJ)
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Name | Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors |
| Polarity | NPN |
