The WST4500D is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF amplification from DC to 4 GHz with 60 W saturated output power at 28 V drain voltage. It features a case style with three terminals for RF input, RF output, and source ground, and operates with a junction temperature up to +225 °C. The device supports high efficiency and is suited for Class A, AB, and linear amplifier applications including cellular infrastructure and radar. It complies with RoHS requirements.
DIE, DC - 4 GHZ, 60W, G28V5-1C
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-WST4500D-GP4-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | Die |
