The WST41H0D-GP4 is a GaN-on-SiC HEMT transistor in a die form factor for RF power amplification up to 6 GHz, operating at 28 V with a maximum saturated output power of 120 W. It features a junction temperature rating of +225°C, an operating temperature range of -40°C to +85°C, and is RoHS compliant. The device is supplied in Gel-Pak packaging with a minimum order quantity of 10 pieces. The series meets standard ESD handling requirements and is designed for applications including cellular infrastructure, radar, and broadband amplifiers.
DIE, DC - 4 GHZ, 120W, G28V5-1C
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-WST41H0D-GP4-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | Die |
