The WST4100D is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF amplification up to 8 GHz with 15 W saturated output power at 28 V drain voltage. It is supplied in a die format with dimensions of 1080 × 900 µm and a thickness of 3 mils. The device has a drain-source breakdown voltage of 84 V, a maximum junction temperature of +225°C, and operates from -40°C to +85°C. It complies with RoHS directives. The WST4100D-GP4 variant is packaged in a Gel-Pak tray with a minimum order quantity of 10 devices.
DIE, DC - 8 GHZ, 15W, G28V5-1C
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-WST4100D-GP4-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | Die |
