The WST4050D is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF amplification from DC to 8 GHz, offering 10 W saturated output power at 28 V drain voltage. The device features a maximum drain-source voltage of 84 V, junction temperature of +225°C, and operates from -40°C to +85°C. It complies with RoHS standards. The WST4050D-GP4 variant is supplied in 10-piece Gel-Pak packaging. Die dimensions and bonding requirements are specified for direct die mounting, with backside source grounding and gold wire bonding recommended. Thermal resistance is 5.7 °C/W under continuous wave operation.
DIE, DC - 8 GHZ, 5W, G28V5-1C
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-WST4050D-GP4-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | Die |
