MACOM RF Power Transistors - GaN on Si - CW


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RF Power Transistors - GaN on Si - CW -  - MACOM
Lowell, MA, USA
RF Power Transistors - GaN on Si - CW
MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear transistors are ideal for civil avionics, communications, networks, long pulsed radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using GaN on Si technology to meet our customers’ most demanding needs. Our GaN on Silicon products, offered as discrete transistors and integrated amplifiers utilizing a 0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency, and ruggedness over wide operating bandwidths.
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Technical Specifications

Product Category RF Transistors
Product Name RF Power Transistors - GaN on Si - CW
Package Type TO-272, PQFN, PDFN, SOIC
Operating Frequency 0.0 to 6000 MHz
Transistor Grade / Operating Range Commercial (optional feature); Industrial (optional feature)
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