MACOM RF Power Transistor - GaN on Si - Pulsed


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RF Power Transistor - GaN on Si - Pulsed -  - MACOM
Lowell, MA, USA
RF Power Transistor - GaN on Si - Pulsed
At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using bipolar, MOSFET, and now GaN technologies to meet our customers’ most demanding needs. Our GaN on Silicon products, offered as discrete transistors and integrated amplifiers utilizing a 0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency, and ruggedness over wide operating bandwidths.
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Technical Specifications

Product Category RF Transistors
Product Name RF Power Transistor - GaN on Si - Pulsed
Package Type SOIC
Operating Frequency 0.0 to 4000 MHz
Transistor Grade / Operating Range Commercial (optional feature); Industrial (optional feature)
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