MACOM Discrete Semiconductor Products - Transistors - FETs, MOSFETs PXAC241002FC-V1-R250

Description
RF MOSFET LDMOS 28V H-37248C-4
Description
RF MOSFET LDMOS 28V H-37248C-4

Suppliers

Company
Product
Description
Supplier Links
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PXAC241002FC-V1-R250
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PXAC241002FC-V1-R250
RF MOSFET LDMOS 28V H-37248C-4

RF MOSFET LDMOS 28V H-37248C-4

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number PXAC241002FC-V1-R250
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type H-37248C-4
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF3805 - 1020714-AUIRF3805 - Win Source Electronics
Infineon Technologies AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF3805
AUIRF3805
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 300000 milliwatts
View Details
7 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SC3116S - 855155-2SC3116S - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SC3116S
2SC3116S
Specs
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Qorvo
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
T1G4020036-FL
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Package Type NI-650 Flanged
Power Gain 18.1 dB
View Details
2 suppliers