MACOM Discrete Semiconductor Products - Transistors - FETs, MOSFETs PTFA092201E-V4-R250

Description
RF MOSFET LDMOS 30V H-36260-2
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PTFA092201E-V4-R250 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
RF MOSFET LDMOS 30V H-36260-2

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PTFA092201E-V4-R250 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PTFA092201E-V4-R250
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PTFA092201E-V4-R250
RF MOSFET LDMOS 30V H-36260-2

RF MOSFET LDMOS 30V H-36260-2

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number PTFA092201E-V4-R250
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Chassis Mount
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SB859C-E - 855128-2SB859C-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SB859C-E
2SB859C-E
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
650V IGBT Transistor - 279-AIKW40N65DF5XKSA1 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
650V IGBT Transistor
AIKW40N65DF5XKSA1
Specs
PD 250 milliwatts
TJ -40 to 175 C (-40 to 347 F)
Package Type Tube
View Details
8 suppliers
Mosfet N-Channel 100V - IRFC120B - Micross Components, Inc.
Micross Components, Inc.
Mosfet N-Channel 100V
IRFC120B
View Details