MACOM RF FETs, MOSFETs MAPC-A3007-AB000

The MAPC-A3007-AB000 is a 30 W, 28 V GaN on SiC transistor for RF amplification in applications such as avionics, military radio, and L, S, C-band radar, offered in a lead-free air cavity ceramic flange package. It operates from DC to 6 GHz with a typical saturated power of 38.7 W, drain efficiency up to 71%, and small signal gain of 15.4 dB at 3.7 GHz. The device requires a thermal and RF ground connection via its flange and supports CW operation with a maximum junction temperature of +225°C. It is RoHS compliant and meets ESD handling precautions for static-sensitive devices.