MACOM RF Diodes - MA4P7441F-1091T MA4P7441F-1091T

Manufacturer: M/A-Com Technology Solutions
Win Source Part Number: 130977-MA4P7441F-1091T
Packaging: Reel - TR
Current - Max: 500mA
Diode Type: PIN - Single
Capacitance @ Vr, F: 2.2pF @ 100V, 100MHz
Voltage - Peak Reverse (Max): 100V
Power Dissipation (Max): 30W
Resistance @ If, F: 500 mOhm @ 100mA, 100MHz
Family Name: MA4P7441F
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 175°C (TJ)
Introduction Date: August 06, 2009
ECCN: EAR99
Estimated EOL Date: 2023
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

RF DIODE PIN 100V 30W Product overview: MA4P7441F-1091T from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 30W. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 100V, 30W, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4P7441F-1091T can be used for catalog matching and distributor lookup.

RF Diode PIN - Single 100V 500mA 30W

RF Diode PIN - Single 100V 500mA 30W

RF Diode PIN - Single 100V 500mA 30W

Single Diode Configuration: The MA4P7441F-1091T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes MACOM's new non- magnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7441F-1091T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance. This MA4P7441F-1091T Non-Magnetic device is similar in electrical performance to the MA4P4001F-1091T Magnetic part number. The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 200 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.