The MA4E1317 is a gallium arsenide flip chip Schottky barrier diode designed for use in millimeter wave applications up to 80 GHz, including balanced mixers in radar systems. It features silicon nitride passivation and polyimide scratch protection, and is packaged in a case style 1278 measuring 0.330 to 0.335 mm in dimension A, 0.660 to 0.685 mm in B, and 0.190 to 0.216 mm in H. The diode has a junction capacitance of 0.020 pF at 0 V and 1 MHz, a series resistance of 4 to 7 ohms at +10 mA, and a forward voltage of 0.60 to 0.80 V at +1 mA. It operates from -65°C to +125°C and withstands a reverse breakdown voltage of 4.5 to 7.0 V at -10 µA. The part is suitable for automated pick-and-place assembly.
Manufacturer: M/A-Com Technology Solutions
Win Source Part Number: 880888-MA4E1317
Operating Temperature Range: -65°C ~ 125°C (TJ)
Features: RF Diode Schottky - Single 7V
Package: 2-SMD
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 100
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 9 Weeks
HTSUS: 8541.10.0060
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 880888-MA4E1317 |
| Product Name | RFFETs - MA4E1317 |
| Package Type | SOT3 |
