RF Mosfet HEMT 50V 83.6mA 960MHz ~ 1.4GHz 17dB 1400W H-36275-4
RF Mosfet HEMT 50V 83.6mA 960MHz ~ 1.4GHz 17dB 1400W H-36275-4
RF Mosfet HEMT 50V 83.6mA 960MHz ~ 1.4GHz 17dB 1400W H-36275-4
The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package with bolt-down flange.
RF MOSFET HEMT 50V H-36275-4
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-GTVA101K42EV-V1-R0TR-ND | GTVA101K42EV-V1-R0 | GTVA101K42EV-V1-R0 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | H-36275-4 | Ceramic Flanged | H-36275-4 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 17 dB |
