The GTRB384608FC-V1 is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications. Featuring an Asymmetric Doherty Design, the GTRB384608FC-V1 provides 47.5dB Avg, 56.4 dBm peak power in 5G band 278.
440W, GAN HEMT, 48V, 3300-3800 M
| Richardson RFPD | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | RF Transistors | RF MOSFET Transistors |
| Product Number | GTRB384608FC-V1-R0 | GTRB384608FC-V1-R0 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN | HEMT |
