The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
RF Mosfet HEMT 48V 200mA 3.4GHz ~ 3.6GHz 13.5dB 280W H-37248C-4
RF MOSFET HEMT 48V H-37248C-4
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | GTRA362802FC-V1-R0 | 1465-GTRA362802FC-V1-R0TR-ND | GTRA362802FC-V1-R0 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flangeless | H-37248C-4 | H-37248C-4 |
| Power Gain | 13.5 dB |
