The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
RF MOSFET HEMT 48V H-37248C-4
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | GTRA263902FC-V2-R0 | GTRA263902FC-V2-R0 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Ceramic Flangeless | H-37248C-4 |
| Power Gain | 13.8 dB |
