RF Mosfet HEMT 40V 500mA 7.9GHz ~ 9.6GHz 17dB 32W 440210
CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
RF MOSFET HEMT 40V 440210
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV96050F1-ND | CGHV96050F1 | CGHV96050F1 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440210 | Ceramic Flanged | 440210 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 15.6 dB |
