CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070P ideal for linear and compressed amplifier circuits. The transistor is available in a pill package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CGHV59070P |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
