RF Mosfet HEMT 50V 150mA 4.4GHz ~ 5.9GHz 13.3dB 76W 440224
CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package
RF MOSFET HEMT 50V 440224
RF MOSFET HEMT 50V 440224
| DigiKey | Richardson RFPD | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | 1465-CGHV59070F-ND | CGHV59070F | CGHV59070F | CGHV59070F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440224 | Ceramic Flanged | 440224 | 440224 |
| Transistor Technology / Material | GaN | HEMT | ||
| Power Gain | 14.3 dB | 13.3 dB |
