CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217.
RF Mosfet HEMT 40V 1A 5GHz 11.8dB 200W 440217
RF MOSFET HEMT 40V 440217
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV50200F | 1465-CGHV50200F-ND | CGHV50200F |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flanged | 440217 | 440217 |
| Power Gain | 12.4 dB |
