RF Mosfet HEMT 50V 1A 2GHz 19.8dB 180W 440206
CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180P ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead pill package.
RF MOSFET HEMT 50V 440206
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV40180P-ND | CGHV40180P | CGHV40180P |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440206 | Ceramic Flangeless | 440206 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 24 dB |
