RF Mosfet HEMT 50V 300mA 0Hz ~ 4GHz 12.5dB 50W 440193
CGHV40050F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050F’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange package.
RF MOSFET HEMT 50V 440193
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV40050F-ND | CGHV40050F | CGHV40050F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440193 | Ceramic Flanged | 440193 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 15.5 dB |
