CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030F operates on a 50 volt rail circuit while housed in a 2-lead flange package.
RF MOSFET HEMT 50V 440166 Product overview: CGHV40030F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGHV40030F can be used for catalog matching and distributor lookup.
RF Mosfet HEMT 50V 150mA 0Hz ~ 6GHz 16dB 30W 440166
RF MOSFET HEMT 50V 440166
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | CGHV40030F | 285-CGHV40030F | 1465-CGHV40030F-ND | CGHV40030F |
| Product Name | RF Power Transistor | 50V MOSFET Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |||
| Package Type | Ceramic Flanged | Tray | 440166 | 440166 |
| Power Gain | 16.6 dB | |||
| Output Power | 30 watts |
