CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input andoutput ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over theentire S-Band radar band. This high-power amplifier provides >10 dB of large signal gain and40% power-added efficiency and is ideally suited as a high-power building block supportingboth pulsed and CW radar applications.
RF MOSFET GAN 50V 440226
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | CGHV38375F | CGHV38375F |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Ceramic Flanged | 440226 |
| Power Gain | 12.6 dB |
