RF Mosfet HEMT 50V 1A 3.3GHz ~ 3.8GHz 14dB 525W 440217
CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217.
RF MOSFET HEMT 50V 440217
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV37400F-ND | CGHV37400F | CGHV37400F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440217 | Ceramic Flanged | 440217 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 14 dB |
