RF Mosfet HEMT 50V 500mA 2.9GHz ~ 3.5GHz 15dB 400W 440226
CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in radar architectures. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400F1 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) manufacturing process. The transistor is supplied in a ceramic/ metal flange package of type 440226.
RF MOSFET HEMT 50V 440226
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV35400F1-ND | CGHV35400F1 | CGHV35400F1 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440226 | Ceramic Flanged | 440226 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 13.6 dB |
