CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217.
RF Mosfet HEMT 45V 500mA 2.9GHz ~ 3.5GHz 11dB 455W 440210
RF MOSFET HEMT 45V 440210
RF MOSFET HEMT 45V 440210
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors | RF MOSFET Transistors |
| Product Number | CGHV35400F | 1465-CGHV35400F-ND | CGHV35400F | CGHV35400F |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN | HEMT | ||
| Package Type | Ceramic Flanged | 440210 | 440210 | 440210 |
| Power Gain | 11.3 dB | 11 dB |
