CGHV35150F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
RF Mosfet HEMT 50V 500mA 2.9GHz ~ 3.5GHz 13.3dB 170W 440193
RF MOSFET HEMT 50V 440193
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV35150F | 1465-CGHV35150F-ND | CGHV35150F |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flanged | 440193 | 440193 |
| Power Gain | 13.3 dB |
