RF Mosfet HEMT 48V 220mA 3.1GHz ~ 3.5GHz 13dB 120W 440162
CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
| DigiKey | Richardson RFPD | |
|---|---|---|
| Product Category | Transistors | RF Transistors |
| Product Number | 1465-CGHV35120F-ND | CGHV35120F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor |
| Package Type | 440162 | Ceramic Flanged |
