CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.1-3.5 GHz high power amplifier.
RF MOSFET HEMT 50V 20TSSOP
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | CGHV35060MP | CGHV35060MP |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Plastic SMT | 20-TSSOP |
| Power Gain | 16.3 dB |
