CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in radar architectures. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV31500F1 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) manufacturing process. The transistor is supplied in a ceramic/metal flange package of type 440226.
RF Mosfet HEMT 50V 500mA 2.7GHz ~ 3.1GHz 15dB 500W 440226
500W, 50V, 2.7-3.1GHZ GAN HEMT
RF MOSFET HEMT 50V 440226
| Richardson RFPD | DigiKey | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | CGHV31500F1 | 1465-CGHV31500F1-ND | CGHV31500F1 | CGHV31500F1 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | HEMT | ||
| Package Type | Ceramic Flanged | 440226 | 440226 | 440226 |
| Power Gain | 14.5 dB | 15 dB |
