RF MOSFET HEMT 50V 440217 Product overview: CGHV31500F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGHV31500F can be used for catalog matching and distributor lookup.
CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217.
RF Mosfet HEMT 50V 500mA 2.7GHz ~ 3.1GHz 13.5dB 500W 440217
RF MOSFET HEMT 50V 440217
RF MOSFET HEMT 50V 440217
| ERSAELECTRONICS PTE. LTD. | Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF Transistors | RF MOSFET Transistors |
| Product Number | 285-CGHV31500F | CGHV31500F | 1465-CGHV31500F-ND | CGHV31500F | CGHV31500F |
| Product Name | 50V MOSFET Transistor | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Polarity | N-Channel | ||||
| Package Type | Tray | Ceramic Flanged | 440217 | 440217 | |
| Packing Method | Tray | Tray | |||
| Transistor Technology / Material | GaN | HEMT |
