The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
RF Mosfet HEMT 50V 130mA 6GHz 20.4dB 30W 12-DFN (4x3)
RF Mosfet HEMT 50V 130mA 6GHz 20.4dB 30W 12-DFN (4x3)
RF Mosfet HEMT 50V 130mA 6GHz 20.4dB 30W 12-DFN (4x3)
RF MOSFET HEMT 50V 12DFN
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV27030S | 1465-CGHV27030SCT-ND | CGHV27030S |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Plastic SMT | 12-VFDFN Exposed Pad | 12-DFN (4x3) |
| Power Gain | 21.3 dB |
