CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1W of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no- lead (DFN) package.
RF Mosfet HEMT 50V 60mA 6GHz 21dB 15W 12-DFN (4x3)
RF Mosfet HEMT 50V 60mA 6GHz 21dB 15W 12-DFN (4x3)
RF Mosfet HEMT 50V 60mA 6GHz 21dB 15W 12-DFN (4x3)
RF MOSFET HEMT 50V 12DFN
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV27015S | 1465-CGHV27015SCT-ND | CGHV27015S |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Plastic SMT | 12-VFDFN Exposed Pad | 12-VFDFN Exposed Pad |
| Power Gain | 21.6 dB |
