RF Mosfet HEMT 40V 150mA 0Hz ~ 15GHz 11.6dBm 29W 12-DFN (4x3)
RF Mosfet HEMT 40V 150mA 0Hz ~ 15GHz 11.6dBm 29W 12-DFN (4x3)
RF Mosfet HEMT 40V 150mA 0Hz ~ 15GHz 11.6dBm 29W 12-DFN (4x3)
CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency.
RF MOSFET HEMT 40V 12DFN
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV1F025STR-ND | CGHV1F025S | CGHV1F025S |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 12-VFDFN Exposed Pad | Plastic SMT | |
| Transistor Technology / Material | GaN | ||
| Power Gain | 14 dB |
