MACOM RF FETs, MOSFETs CGHV1F006S

RF Mosfet HEMT 40V 60mA 6GHz 16dB 8W 12-DFN (4x3)

RF Mosfet HEMT 40V 60mA 6GHz 16dB 8W 12-DFN (4x3)

RF Mosfet HEMT 40V 60mA 6GHz 16dB 8W 12-DFN (4x3)

CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 - 9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V V_DD, maintaining high gain and efficiency.

RF MOSFET HEMT 40V 12DFN Product overview: CGHV1F006S from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGHV1F006S can be used for catalog matching and distributor lookup.