CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range surveillance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency.
RF Mosfet HEMT 50V 800mA 1.4GHz 14.5dB 900W 440117
RF MOSFET HEMT 50V 440117
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV14800F | 1465-CGHV14800F-ND | CGHV14800F |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flanged | 440117 | 440117 |
| Power Gain | 15.2 dB |
