RF Mosfet HEMT 28V 100mA 6GHz 15dB 8W Die
CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
RF MOSFET HEMT 28V DIE
RF MOSFET HEMT 28V DIE
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors | RF MOSFET Transistors |
| Product Number | 1465-CGH60008D-GP4-ND | CGH60008D-GP4 | CGH60008D-GP4 | CGH60008D-GP4 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Package Type | Die | Die | Die | |
| Transistor Technology / Material | GaN | HEMT | ||
| Power Gain | 15 dB | 15 dB |
