RF Mosfet HEMT 28V 2A 0Hz ~ 2.5GHz 19dB 220W 440199
CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.
RF MOSFET HEMT 28V 440199 Product overview: CGH40180PP from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40180PP can be used for catalog matching and distributor lookup.
RF MOSFET HEMT 28V 440199
| DigiKey | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1465-CGH40180PP-ND | CGH40180PP | 285-CGH40180PP | CGH40180PP |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | 28V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440199 | Ceramic Flanged | Tray | 440199 |
| Transistor Technology / Material | GaN | |||
| Power Gain | 19 dB | |||
| Output Power | 180 watts |
