CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.
RF Mosfet HEMT 28V 1A 0Hz ~ 4GHz 12.5dB 100W 440199
RF MOSFET HEMT 28V 440199
RF MOSFET HEMT 28V 440199
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors | RF MOSFET Transistors |
| Product Number | CGH40090PP | 1465-CGH40090PP-ND | CGH40090PP | CGH40090PP |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN | HEMT | ||
| Package Type | Ceramic Flanged | 440199 | 440199 | 440199 |
| Power Gain | 12.5 dB | 12.5 dB |
