RF Mosfet HEMT 28V 500mA 0Hz ~ 4GHz 14dB 45W 440193
CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package.
A high power RF Amplifier module with this device is available:
1131/BBM5K8CGM
1119/BBM3K5KHM
RF MOSFET HEMT 28V 440193 Product overview: CGH40035F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40035F can be used for catalog matching and distributor lookup.
RF MOSFET HEMT 28V 440193
RF MOSFET HEMT 28V 440193
| DigiKey | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF MOSFET Transistors |
| Product Number | 1465-CGH40035F-ND | CGH40035F | 285-CGH40035F | CGH40035F | CGH40035F |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | 28V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Package Type | 440193 | Ceramic Flanged | Tray | 440193 | 440193 |
| Transistor Technology / Material | GaN | HEMT | |||
| Power Gain | 14 dB | 14 dB | |||
| Output Power | 35 watts |