RF Mosfet HEMT 28V 250mA 6GHz 13dB 30W 440196
CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill packages.
A high power RF Amplifier module with this device is available:
1203/BBM3K5ANQ
1119/BBM3K5KHM
RF MOSFET HEMT 28V 440196
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGH40025P-ND | CGH40025P | CGH40025P |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440196 | Ceramic Flangeless | 440196 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 13 dB |
