MACOM RF Power Transistor CGH40025F

Description
CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. A high power RF Amplifier module with this device is available: 1203/BBM3K5ANQ 1119/BBM3K5KHM
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Description
CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. A high power RF Amplifier module with this device is available: 1203/BBM3K5ANQ 1119/BBM3K5KHM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - CGH40025F - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
CGH40025F
RF Power Transistor CGH40025F
CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. A high power RF Amplifier module with this device is available: 1203/BBM3K5ANQ 1119/BBM3K5KHM

CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.

A high power RF Amplifier module with this device is available:

1203/BBM3K5ANQ

1119/BBM3K5KHM

Supplier's Site
Singapore, Singapore
28V MOSFET Transistor
285-CGH40025F
28V MOSFET Transistor 285-CGH40025F
RF MOSFET HEMT 28V 440166 Product overview: CGH40025F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40025F can be used for catalog matching and distributor lookup.

RF MOSFET HEMT 28V 440166 Product overview: CGH40025F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40025F can be used for catalog matching and distributor lookup.

Supplier's Site
RF FETs, MOSFETs - 1465-CGH40025F-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-CGH40025F-ND
RF FETs, MOSFETs 1465-CGH40025F-ND
RF Mosfet HEMT 28V 250mA 0Hz ~ 6GHz 13dB 30W 440166

RF Mosfet HEMT 28V 250mA 0Hz ~ 6GHz 13dB 30W 440166

Buy Now Datasheet
RF FETs, MOSFETs - CGH40025F - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
CGH40025F
RF FETs, MOSFETs CGH40025F
RF MOSFET HEMT 28V 440166

RF MOSFET HEMT 28V 440166

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CGH40025F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CGH40025F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CGH40025F
RF MOSFET HEMT 28V 440166

RF MOSFET HEMT 28V 440166

Supplier's Site

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors RF Transistors
Product Number CGH40025F 285-CGH40025F 1465-CGH40025F-ND CGH40025F CGH40025F
Product Name RF Power Transistor 28V MOSFET Transistor RF FETs, MOSFETs RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material GaN HEMT
Package Type Ceramic Flanged Tray 440166 440166
Power Gain 13 dB 13 dB
Output Power 25 watts
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