MACOM RF Power Transistor CGH40010F

Description
CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010F ideal for linear and compressed amplifier circuits. The transistor is available in a flange packages. A high power RF Amplifier module with this device is available: 1208/BBM3K5OKO 1164/BBM3Q6AHM 1131/BBM5K8CGM
Request a Quote Datasheet
Description
CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010F ideal for linear and compressed amplifier circuits. The transistor is available in a flange packages. A high power RF Amplifier module with this device is available: 1208/BBM3K5OKO 1164/BBM3Q6AHM 1131/BBM5K8CGM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - CGH40010F - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
CGH40010F
RF Power Transistor CGH40010F
CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010F ideal for linear and compressed amplifier circuits. The transistor is available in a flange packages. A high power RF Amplifier module with this device is available: 1208/BBM3K5OKO 1164/BBM3Q6AHM 1131/BBM5K8CGM

CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010F ideal for linear and compressed amplifier circuits. The transistor is available in a flange packages.

A high power RF Amplifier module with this device is available:

1208/BBM3K5OKO

1164/BBM3Q6AHM

1131/BBM5K8CGM

Supplier's Site
Singapore, Singapore
28V MOSFET Transistor
285-CGH40010F
28V MOSFET Transistor 285-CGH40010F
RF MOSFET HEMT 28V 440166 Product overview: CGH40010F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40010F can be used for catalog matching and distributor lookup.

RF MOSFET HEMT 28V 440166 Product overview: CGH40010F from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40010F can be used for catalog matching and distributor lookup.

Supplier's Site
RF FETs, MOSFETs - 1465-CGH40010F-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-CGH40010F-ND
RF FETs, MOSFETs 1465-CGH40010F-ND
RF Mosfet HEMT 28V 200mA 0Hz ~ 6GHz 14.5dB 12.5W 440166

RF Mosfet HEMT 28V 200mA 0Hz ~ 6GHz 14.5dB 12.5W 440166

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CGH40010F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CGH40010F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CGH40010F
RF MOSFET HEMT 28V 440166

RF MOSFET HEMT 28V 440166

Supplier's Site
RF FETs, MOSFETs - CGH40010F - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
CGH40010F
RF FETs, MOSFETs CGH40010F
RF MOSFET HEMT 28V 440166

RF MOSFET HEMT 28V 440166

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF MOSFET Transistors
Product Number CGH40010F 285-CGH40010F 1465-CGH40010F-ND CGH40010F CGH40010F
Product Name RF Power Transistor 28V MOSFET Transistor RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs RF FETs, MOSFETs
Transistor Technology / Material GaN HEMT
Package Type Ceramic Flanged Tray 440166 440166 440166
Power Gain 14.5 dB 14.5 dB
Output Power 10 watts
Unlock Full Specs
to access all available technical data