CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package.
RF MOSFET HEMT 28V 440109 Product overview: CGH40006P from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40006P can be used for catalog matching and distributor lookup.
RF MOSFET HEMT 28V 440109
RF MOSFET HEMT 28V 440109
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF MOSFET Transistors |
| Product Number | CGH40006P | 285-CGH40006P | CGH40006P | CGH40006P |
| Product Name | RF Power Transistor | 28V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN | HEMT | ||
| Package Type | Ceramic Flangeless | Tray | 440109 | |
| Power Gain | 13 dB | 13 dB | ||
| Output Power | 6 watts |
