CGH35060F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange package.
RF MOSFET HEMT 28V 440193
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | CGH35060F2 | CGH35060F2 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Flanged | 440193 |
| Power Gain | 13 dB |
