RF Mosfet HEMT 28V 150mA 2.3GHz ~ 2.9GHz 14.5dB 30W 440196
CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in a pill package.
RF MOSFET HEMT 28V 440196 Product overview: CGH27030P from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH27030P can be used for catalog matching and distributor lookup.
RF MOSFET HEMT 28V 440196
| DigiKey | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1465-CGH27030P-ND | CGH27030P | 285-CGH27030P | CGH27030P |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | 28V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440196 | Ceramic Flangeless | Tray | 440196 |
| Transistor Technology / Material | GaN | |||
| Power Gain | 14.5 dB | |||
| Output Power | 4 watts |
